feb. 2009 CM400DU-12NFH application high frequency switching use (30khz to 60khz). gradient amplifier, induction heating, power supply, etc. mitsubishi igbt modules CM400DU-12NFH high power switching use ? i c ................................................................... 400a ? v ces ............................................................ 600v ? insulated type ? 2-elements in a pack outline drawing & circuit diagram dimensions in mm 8.85 (8.25) (18) circuit diagram c2e1 e2 c1 g2e2 e1 g1 4 0.5 0.5 25.7 0.5 0.5 e1 e2 g2 g1 cm c1 e2 c2e1 label 4-6. 5 mounting holes 3-m6 nuts 108 29 +1.0 ?.5 62 18 7 18 7 18 8.5 22 93 0.25 48 0.25 2.8 4 7.5 6156 (7) 17.5 14 14 14 25 2.5 21.5 25 t c measured point (7.5) (7.5)
feb. 2009 2 gate-emitter threshold voltage thermal resistance *1 v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 300v, i c = 400a, v ge = 15v v cc = 300v, i c = 400a v ge = 15v r g = 3.1? , inductive load i e = 400a i e = 400a, v ge = 0v igbt part (1/2 module) fwdi part (1/2 module) case to heat sink, thermal compound applied *2 (1/2 module) case temperature measured point is just under the chips (1/2 module) i c = 40ma, v ce = 10v i c = 400a, v ge = 15v v ce = 10v v ge = 0v 600 20 400 800 400 800 960 1640 ?0 ~ +150 ?0 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 mitsubishi igbt modules CM400DU-12NFH high power switching use v v a a a a w w c c v rms n ?m n ?m g 1 0.5 2.7 110 7.2 4.0 400 200 700 150 200 2.6 0.13 0.18 0.076 *3 16 ma a nf nf nf nc ns ns ns ns c v k/w k/w k/w k/w ? 2.0 1.95 2480 7.7 0.04 1.6 6v v 57 ns collector cutoff current gate leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance t otal gate charge t urn-on delay time turn -on rise time t urn-off delay time t urn-off fall time reverse recovery time reverse recovery charge emitter-collector voltage contact thermal resistance thermal resistance external gate resistance i ces i ges c ies c oes c res q g t d(on) t r t d(off) t f t rr ( note 1 ) q rr ( note 1 ) v ec( note 1 ) r th(j-c) q r th(j-c) r r th(c-f) r th(j-c? q r g symbol parameter v ge(th) v ce(sat) * 1 : case temperature (t c ) measured point is shown in page outline drawing. * 2 : typical value is measured by using thermally conductive grease of = 0.9[w/(m ?k)]. * 3 : if you use this value, r th(f-a) should be measured just under the chips. * 4 : case temperature (t c ? measured point is just under the chips. note 1. i e , i em , v ec , t rr & q rr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (fwdi). 2. pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t jmax rating. 3. junction temperature (t j ) should not increase beyond 150 c. 4. no short circuit capability is designed. collector-emitter voltage gate-emitter voltage maximum collector dissipation maximum collector dissipation junction temperature storage temperature isolation voltage weight g-e short c-e short operation pulse (note 2) operation pulse (note 2) t c = 25 c t c ?= 25 c *4 terminals to base plate, f = 60hz, ac 1 minute main terminals m6 screw mounting m6 screw t ypical value symbol parameter collector current emitter current mounting torque conditions unit ratings v ces v ges i c i cm i e ( note 1 ) i em ( note 1 ) p c ( note 3 ) p c ( note 3 ) t j t stg v iso unit t yp. limits min. max. test conditions maximum ratings (tj = 25 c, unless otherwise specified) electrical characteristics (tj = 25 c, unless otherwise specified)
feb. 2009 3 mitsubishi igbt modules CM400DU-12NFH high power switching use performance curves output characteristics (typical) collector current i c (a) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) gate-emitter voltage v ge (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) free-wheel diode forward characteristics (typical) emitter current i e (a) emitter-collector voltage v ec (v) capacitance? ce characteristics (typical) capacitance c ies , c oes , c res (nf) collector-emitter voltage v ce (v) half-bridge switching characteristics (typical) switching time (ns) collector current i c (a) 800 700 600 200 500 400 100 300 0 02345 t j = 25c v ge = 20v 1 1.5 2.5 3.5 4.5 0.5 15 8 7 7.5 8.5 13 11 10 9 9.5 0 0.5 1 1.5 2 2.5 3 0 100 200 300 400 500 600 700 800 v ge = 15v t j = 25c t j = 125c 5 4 3 2 1 4.5 3.5 2.5 1.5 0.5 0 20 12 14 6810 16 18 t j = 25c i c = 160a i c = 800a i c = 400a 10 ? 10 1 10 0 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 2 10 0 357 2 10 1 357 2 10 2 357 c ies c oes c res v ge = 0v 10 1 2 3 5 7 10 3 10 2 2 3 5 7 10 1 10 2 57 10 3 23 57 23 t d(off) t d(on) t f t r 10 1 2 3 5 7 10 2 2 3 5 7 10 3 0 0.5 1 1.5 2 2.5 3 t j = 25c conditions: v cc = 300v v ge = 15v r g = 3.1? t j = 125c inductive load
feb. 2009 4 mitsubishi igbt modules CM400DU-12NFH high power switching use reverse recovery characteristics of free-wheel diode (typical) emitter current i e (a) reverse recovery time t rr (ns) reverse recovery current l rr (a) transient thermal impedance characteristics (igbt part ) normalized transient thermal impedance z th (j?) time (s) transient thermal impedance characteristics (fwdi part) normalized transient thermal impedance z th (j?) time (s) gate charge characteristics (typical) gate-emitter voltage v ge (v) gate charge q g (nc) 10 1 10 2 23 57 10 3 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 t rr i rr 10 ? 10 ? 10 ? 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 23 57 23 57 23 57 23 57 10 1 10 ? 10 ? 10 0 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 23 57 23 57 single pulse t c = 25c 10 ? 10 ? 10 ? 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 23 57 23 57 23 57 23 57 10 1 10 ? 10 ? 10 0 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 23 57 23 57 single pulse t c = 25c 0 4 8 16 12 20 0 500 1000 1500 2000 2500 3000 3500 per unit base = r th(j c) = 0.13k / w per unit base = r th(j ?) = 0.18k / w v cc = 200v v cc = 300v i c = 400a conditions: v cc = 300v v ge = 15v r g = 3.1? t j = 25c inductive load
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